Characterization of InAs quantum wires on (001) InP: toward the realization of VCSEL structures with a stabilized polarization
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Effect of substrate misorientation on the InAs/ InAlAs/ InP nanostructure morphology and lateral composition modulation in the InAlAs matrix
The authors report the self-organized growth of InAs/ InAlAs quantum wires on nominal 001 InP substrate and 001 InP substrates misoriented by 2°, 4°, and 8° towards both −110 and 110 . The influence of substrate misorientation on the structural and optical properties of these InAs/ InAlAs quantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared w...
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In this work we have studied the dependence of the optical properties of self-assembled InAs quantum wires (QWr) grown on InP(001) on the growth temperature of the InP cap layer, as a mean for controlling the InAs QWr size. Our main result is that we can tune the emission wavelength of InAs QWr either at 1.3 μm or 1.55 μm at room temperature. We suggest that the role of growth temperature is to...
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Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InA...
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تاریخ انتشار 2017